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參數(shù)資料
| 型號： | 2N6288BD |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 30 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 23/60頁 |
| 文件大?。?/td> | 371K |
| 代理商： | 2N6288BD |
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2N6107 2N6109 2N6111 2N6288 2N6292
3–103
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
θJC(t) = r(t) RθJC
R
θJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.1
0.5
0.2
15
1.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
2.0
0.15
5.0
10
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ TC = 25°C (SINGLE PULSE)
7.0
I C
,C
OLLE
CT
OR
C
URREN
T
(AMPS
)
dc
0.1 ms
1.0
0.5
0.2
0.3
2.0
3.0
0.5 ms
20
30
50
70 100
3.0
0.7
0.1
ms
5.0 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
300
0.5
VR, REVERSE VOLTAGE (VOLTS)
30
3.0
5.0
50
1.0
2.0
C,
CAP
ACIT
ANCE
(pF)
200
70
50
TJ = 25°C
Cib
100
Figure 6. Turn–Off Time
10
20
30
5.0
0.07
Figure 7. Capacitance
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.7
0.5
0.3
0.05
0.1
0.2
0.3
0.5
2.0
3.0
7.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
0.1
t,
T
IME
(
s)
tr
1.0
5.0
0.2
0.07
ts
Cob
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6109BV | 7 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2N6292DW | 7 A, 70 V, NPN, Si, POWER TRANSISTOR |
| 2N6109BD | 7 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2N6292BD | 7 A, 70 V, NPN, Si, POWER TRANSISTOR |
| 2N6292BU | 7 A, 70 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6288G | 功能描述:兩極晶體管 - BJT 7A 30V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6289 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS |
| 2N629 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:GE PNP POWER BJT |
| 2N6290 | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6290 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-220 |
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