參數(shù)資料
型號(hào)： 2N6292AF
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 7 A, 70 V, NPN, Si, POWER TRANSISTOR
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 12/60頁
文件大?。?/td> 371K
代理商： 2N6292AF
2N6107 2N6109 2N6111 2N6288 2N6292
3–102
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
2N6111, 2N6288
2N6109
2N6107, 2N6292
VCEO(sus)
30
50
70
—
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N6111, 2N6288
(VCE = 40 Vdc, IB = 0)
2N6109
(VCE = 60 Vdc, IB = 0)
2N6107, 2N6292
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N6111, 2N6288
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6109
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N6107, 2N6292
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6111, 2N6288
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6109
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6107, 2N6292
ICEX
—
100
2.0
Adc
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc)
2N6107, 2N6292
(IC = 2.5 Adc, VCE = 4.0 Vdc)
2N6109
(IC = 3.0 Adc, VCE = 4.0 Vdc)
2N6111, 2N6288
(IC = 7.0 Adc, VCE = 4.0 Vdc)
All Devices
hFE
30
2.3
150
—
—
Collector–Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 3.0 Adc)
VCE(sat)
—
3.5
Vdc
Base–Emitter On Voltage
(IC = 7.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
3.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (2)
(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
2N6288, 92
2N6107, 09, 11
fT
4.0
10
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
250
pF
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)
hfe
20
—
—
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
(2) fT = |hfe| ftest.
Figure 2. Switching Time Test Circuit
+11 V
25
s
0
– 9.0 V
RB
–4 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
2.0
0.07
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02
0.1
0.2
0.3
0.5
2.0
3.0
7.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
0.05
t,TIME
(
s)
tr
1.0
5.0
td @ VBE(off) ≈ 5.0 V
0.07
0.03
相關(guān)PDF資料
PDF描述
2N6292BG 7 A, 70 V, NPN, Si, POWER TRANSISTOR
2N6111AU 7 A, 30 V, PNP, Si, POWER TRANSISTOR
2N6111BD 7 A, 30 V, PNP, Si, POWER TRANSISTOR
2N6292AU 7 A, 70 V, NPN, Si, POWER TRANSISTOR
2N6107BV 7 A, 70 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6292G 功能描述:兩極晶體管 - BJT 7A 70V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N6292MOT 制造商:Motorola 功能描述:2N6292 S9G4A
2N6293 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N6294 功能描述:兩極晶體管 - BJT Power Transistor Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N6295 制造商:Microsemi Corporation 功能描述:Trans Darlington NPN 80V 8A 3-Pin(2+Tab) TO-66 制造商:Microsemi Corporation 功能描述:2N6295 - Bulk
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