參數(shù)資料
型號: 2N6299-JQR-AR1
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-66
文件頁數(shù): 2/3頁
文件大?。?/td> 29K
代理商: 2N6299-JQR-AR1
Document Number 2660
Issue 2
2N6299SMD
2N6299SMD05
2N6301SMD
2N6301SMD05
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Collector – Emitter Sustaining
Voltage *
Collector Cut–off Current
Emitter Cut–off Current
DC Current Gain*
Collector – Emitter Saturation
Voltage*
Base – Emitter Saturation Voltage*
Base – Emitter On Voltage*
Output Capacitance
Magnitude of Common Emitter
Small Signal Short Circuit Current
Transfer Ratio
Small Signal Current Gain*
80
0.5
5.0
2
750
18000
100
2.0
3.0
4.0
2.8
200
25
350
300
V
mA
V
pF
VCEO(sus)
ICEO
ICEX
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Cob
hfe
hfe
Notes
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
OFF CHARACTERISTICS
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
* Pulse test: tp = 300s , Duty Cycle = 2%
IC = 100mA
IB = 0
VCE = 40V
IB = 0
VCE = Rated VCB VBE(off) = 1.5V
TC = 150°C
VBE = 5V
IC = 0
VCE = 3V
IC = 4A
VCE = 3V
IC = 8A
IC = 4A
IB = 16mA
IC = 8A
IB = 80mA
IC = 8A
IB = 80mA
VCE = 3V
IC = 4A
VCB = 10V
IE = 0
f = 0.1MHz
VCE = 3V
IC = 3A
f = 1MHz
VCE = 3V
IC = 3A
f = 1kHz
相關(guān)PDF資料
PDF描述
2N6301 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66
2N6306-JQR-A 8 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N6306-JQR-BR1 8 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N6306R1 8 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N6306 8 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
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