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參數(shù)資料
| 型號(hào)： | 2N6301SMD-JQRR4 |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
| 封裝： | SMD1-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | 2N6301SMD-JQRR4 |
Document Number 2660
Issue 2
2N6299SMD
2N6299SMD05
2N6301SMD
2N6301SMD05
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
VCEO
Collector – Emitter Voltage
VCBO
Collector – Base Voltage
VEBO
Emitter – Base Voltage
IC
Continuous Collector Current
Peak
IB
Base Current
PD
Total Dissipation @ TC = 25°C
Derate above 25°C
TSTG , TJ
Operating and Storage Junction Temperature Range
80V
5V
8A
16A
120mA
75W
0.428W/°C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
COMPLEMENTARY SILICON
POWER TRANSISTORS
Designed for general purpose
amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated)
FEATURES
High DC Current Gain
Monolithic Construction with Built-in
Base–Emitter Shunt Resistors
3. 60 ( 0. 142)
Ma x .
3. 70 ( 0. 146)
3. 41 ( 0. 134)
3. 70 ( 0. 146)
3. 41 ( 0. 134)
0. 89
( 0 . 035)
mi n .
4.
14
(0.
163)
3.
84
(0.
151)
10.
69
(0
.4
21)
10.
39
(0
.4
09)
9. 67 ( 0. 381)
9. 38 ( 0. 369)
11. 58 ( 0 . 4 56)
11. 28 ( 0 . 4 44)
16.
02
(0
.6
31)
15.
73
(0
.6
19)
0. 50 ( 0. 020)
0. 26 ( 0. 010)
0.
76
(0
.030) mi
n.
13
2
SMD1 (TO-276AB)
Pad 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
SMD05 (TO-276AA)
Pad 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
2N6299SMD - PNP TRANSISTOR
2N6301SMD - NPN TRANSISTOR
!
0 . 1 27 ( 0 . 005)
2 . 41 ( 0 . 0 95)
(0 . 0 3 0 )
mi n .
3
.0
5
(0
.1
20
)
5
.7
2(
.2
25
)
0 . 1 27 ( 0 . 005)
( 0 .2 9 6 )
1
0.
16
(0
.4
00
)
0.
76
(0
.0
30)
mi
n.
3. 175 ( 0 . 125)
Ma x .
0. 50 ( 0. 020)
0. 26 ( 0. 010)
7. 54
0. 76
2 . 41 ( 0 . 0 95)
0 . 1 27 ( 0 . 005)
( 0. 286)
7. 26
16 P LC S
0 . 5 0( 0. 020)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6299-JQR-AR1 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 2N6301 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6306-JQR-A | 8 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6306-JQR-BR1 | 8 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6306R1 | 8 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6302 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar NPN Device |
| 2N6303 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 3A 3PIN TO-5 - Bulk |
| 2N6304 | 制造商:Motorola 功能描述:2N6304 MOT |
| 2N6305 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| 2N6306 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 250V 8A 3PIN TO-3 - Bulk 制造商:Microsemi 功能描述:Microsemi 2N6306 GP BJTs |
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