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參數(shù)資料
| 型號： | 2N6303 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP Power Transistors |
| 中文描述： | 3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2N6303 |
MSC1062.PDF 05-25-99
2N6303
ELECTRICAL CHARACTERISTICS:
(25
°
Case Temperature Unless Otherwise Noted)
VALUE
Min.
-
80
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Max.
----
Units
V
CEO(sus)
*
Collector-Emitter
Sustaining Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
(Note 1)
I
C
= 20 mAdc, I
B
= 0 (Note 1)
Vdc
BV
CBO
*
I
C
= 100
μ
Adc, I
E
= 0
-
80
----
Vdc
BV
EBO
*
I
E
= 100
μ
Adc, I
C
= 0
-
4.0
----
Vdc
I
CEX
*
I
CBO
*
h
FE
*
V
CE
=
-
80V
,
V
BE(off)
= 2.0 Vdc
V
CB
=
-
80V, I
E
= 0, T
C
= 150
°
C
I
C
= 500 mAdc, V
CE
=
-
1.0 Vdc
I
C
= 1.5 Adc, V
CE
=
-
2.0 Vdc
I
C
= 2.5 Adc, V
CE
=
-
3.0 Vdc
I
C
= 3.0 Adc, V
CE
=
-
5.0 Vdc
----
----
35
30
20
----
----
----
1.0
150
----
150
----
----
-
0.5
-
0.75
-
1.3
-
1.0
-
1.4
-
2.0
----
μ
Adc
μ
Adc
----
----
----
----
Vdc
Vdc
Vdc
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
(Note 1)
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.5 Adc, I
B
= 150 mAdc
I
C
= 2.5 Adc, I
B
= 250 mAdc
V
BE(sat)
*
Base-Emitter Saturation
Voltage
(Note 1)
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.5 Adc, I
B
= 150 mAdc
I
C
= 2.5 Adc, I
B
= 250 mAdc
----
-
0.9
----
Vdc
Vdc
Vdc
f
T
*
Current Gain Bandwidth
Product (Note 2)
I
C
= 100 mAdc, V
CE
=
-
5.0 Vdc, f
test
= 20 MHz
60
MHz
C
ob
*
C
ib
*
td
*
Output Capacitance
Input Capacitance
V
CB
=
-
10 Vdc, I
E
= 0, f = 0.1 MHz
V
EB
=
-
3.0 Vdc, I
C
= 0, f = 0.1 MHz
V
CC
=
-
30 Vdc, V
BE(off)
= 0, I
C
=1.5 Adc,
I
B1
= 150 mAdc
V
CC
=
-
30 Vdc, V
BE(off)
= 0, I
C
=1.5 Adc,
I
B1
= 150 mAdc
V
CC
=
-
30 Vdc, IC = 1.5 Adc, I
B1
= I
B2
=150 mAdc
V
CC
=
-
30 Vdc, IC = 1.5 Adc, I
B1
= I
B2
=150 mAdc
----
----
----
120
1000
35
pF
pF
ns
Delay Time
tr
*
Rise Time
----
65
ns
ts*
tf*
Storage Time
Fall Time
----
----
325
75
ns
ns
Note 1: Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
Note 2: fT = |hfe| * f
test
* Indicates JEDEC registered data.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6304 | 制造商:Motorola 功能描述:2N6304 MOT |
| 2N6305 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| 2N6306 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 250V 8A 3PIN TO-3 - Bulk 制造商:Microsemi 功能描述:Microsemi 2N6306 GP BJTs |
| 2N6307 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Transistors |
| 2N6308 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 8A 3PIN TO-3 - Bulk 制造商:SPC Multicomp 功能描述:TRANSISTOR 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, NPN, 350V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:5MHz; Power Dissipation Pd:125W; DC Collector Current:8A; DC Current Gain hFE:60; No. of Pins:2 ;RoHS Compliant: Yes |
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