參數(shù)資料
型號(hào): 2N6339
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: High-Power NPN Silicon Transistor(25A,200W,120V(集電極-發(fā)射極),硅NPN大功率晶體管)
中文描述: 25 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝: METAL, TO-3, 2 PIN
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 62K
代理商: 2N6339
High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifier and
switching circuit applications.
High Collector–Emitter Sustaining Voltage —
V
CEO(sus)
= 100 Vdc (Min) — 2N6338
= 120 Vdc (Min) — 2N6339
= 140 Vdc (Min) — 2N6340
= 150 Vdc (Min) — 2N6341
High DC Current Gain —
h
FE
= 30 – 120 @ I
C
= 10 Adc
= 12 (Min) @ I
C
= 25 Adc
Low Collector–Emitter Saturation Voltage —
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 10 Adc
Fast Switching Times @ I
C
= 10 Adc
t
r
= 0.3 ms (Max)
t
s
= 1.0 ms (Max)
t
f
= 0.25 ms (Max)
Complement to 2N6436–38
Emitter–Base Voltage
V
EB
Collector–Emitter Voltage
V
100
120
6.0
140
150
Vdc
Vdc
Peak
@ T
= 25 C
Derate above 25 C
OTemperature Range
I
B
P
D
50
W/
°
C
Collector Current
I
C
200
1.14
–65 to +200
Adc
Base Current
Total Device Dissipation
10
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
T
J
, T
stg
C
θ
JC
0.875
C/W
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 8
1
Publication Order Number:
2N6338/D
2N6338
2N6339
2N6340
2N6341
*ON Semiconductor Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
*
CASE 1–07
TO–204AA
(TO–3)
相關(guān)PDF資料
PDF描述
2N6340 High-Power NPN Silicon Transistor(25A,200W,140V(集電極-發(fā)射極),硅NPN大功率晶體管)
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2N6343 TRIACS Silicon Bidirectional Triode Thyristors
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