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參數(shù)資料
| 型號： | 2N6339 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 25 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 155K |
| 代理商： | 2N6339 |
2N6338 2N6339 2N6340 2N6341
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t),
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
θJC = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3
3.0
30
300
CURVES APPLY BELOW
RATED VCEO
100
2.0
Figure 5. Active Region Safe Operating Area
50
5.0
0.01
10
20
70
200
TJ = 200°C
2N6338
2N6339
2N6340
2N6341
0.1
10
0.5
I C
,COLLECT
OR
CURRENT
(AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
0.2
50
100
200
s
5.0 ms
1.0 ms
dc
2.0
0.02
0.05
1.0
3.0 5.0
30
7.0
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
5.0
0.3
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
t,
TIME
(
s)
2.0
1.0
0.5
0.3
0.2
0.1
0.07
0.05
0.5 0.7
1.0
2.0
5.0
10
20
30
VCC = 80 V
IB1 = IB2
IC/IB = 10
TJ = 25°C
ts
3.0
0.7
3.0
tf
5000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
50
0.5
1.0
2.0
5.0
20
50
100
10
C,
CAP
ACIT
ANCE
(pF)
700
500
200
100
TJ = 25°C
Cib
Cob
3000
2000
1000
70
300
0.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6339ACECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 25A I(C) | TO-204AA |
| 2N6339X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N634 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9 |
| 2N6340 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 30A 3PIN TO-3 - Bulk 制造商:NTE Electronics 功能描述:T-NPN SI-PWR AMP SW 制造商:NTE Electronics 功能描述:T-NPN SI-PWR AMP SW 制造商:NTE Electronics 功能描述:T-NPN SI-PWR AMP SW ;ROHS COMPLIANT: YES |
| 2N6340X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
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