參數(shù)資料
型號(hào)： 2N6347
廠商： MOTOROLA INC
元件分類： 晶閘管
英文描述： TRIACS Silicon Bidirectional Triode Thyristors
中文描述： 400 V, 8 A, TRIAC, TO-220AB
文件頁數(shù)： 2/6頁
文件大?。?/td> 114K
代理商： 2N6347
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, Junction to Case
R
θ
JC
2.2
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C, and Either Polarity of MT2 to MT1 Voltage, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
*Peak Blocking Current
(VD = Rated VDRM, gate open) TJ = 25
°
C
TJ = 100
°
C
IDRM
—
—
—
—
10
2
μ
A
mA
*Peak On-State Voltage
(ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
(Minimum Gate Pulse Width = 2
μ
s)
MT2(+), G(+) All Types
MT2(+), G(–) 2N6346 thru 49
MT2(–), G(–) All Types
MT2(–), G(+) 2N6346 thru 49
*MT2(+), G(+); MT2(–), G(–) TC = –40
°
C All Types
*MT2(+), G(–); MT2(–), G(+) TC = –40
°
C 2N6346 thru 49
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
(Minimum Gate Pulse Width = 2
μ
s)
MT2(+), G(+) All Types
MT2(+), G(–) 2N6346 thru 49
MT2(–), G(–) All Types
MT2(–), G(+) 2N6346 thru 49
*MT2(+), G(+); MT2(–), G(–) TC = –40
°
C All Types
*MT2(+), G(–); MT2(–), G(+) TC = –40
°
C 2N6346 thru 49
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 100
°
C)
*MT2(+), G(+); MT2(–), G(–) All Types
*MT2(+), G(–); MT2(–), G(–) 2N6346 thru 49
2%)
VTM
—
1.3
1.55
Volts
IGT
—
—
—
—
—
—
12
12
20
35
—
—
50
75
50
75
100
125
mA
VGT
—
—
—
—
—
—
0.2
0.2
0.9
0.9
1.1
1.4
—
—
—
—
2
2.5
2
2.5
2.5
3
—
—
Volts
*Holding Current
(VD = 12 Vdc, Gate Open)
(IT = 200 mA)
*Turn-On Time
(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA,
Rise Time = 0.1
μ
s, Pulse Width = 2
μ
s)
TC = 25
°
C
*TC = –40
°
C
IH
—
—
6
—
40
75
mA
tgt
—
1.5
2
μ
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms,
Gate Unenergized, TC = 80
°
C)
*Indicates JEDEC Registered Data.
dv/dt(c)
—
5
—
V/
μ
s
2.0
4.0
6.0
8.0
10
3.0
7.0
6.0
5.0
4.0
1.0
2.0
0
0
IT(RMS), RMS ON-STATE CURRENT (AMP)
α
α
dc
30
°
60
°
90
°
120
°
α
= 180
°
TJ
100
°
C
8.0
α
= CONDUCTION ANGLE
(
FIGURE 1 – RMS CURRENT DERATING
FIGURE 2 – ON-STATE POWER DISSIPATION
1.0
2.0
3.0
4.0
5.0
6.0
7.0
96
92
88
84
80
α
= CONDUCTION ANGLE
α
α
IT(RMS), RMS ON-STATE CURRENT (AMP)
100
8.0
0
dc
α
= 30
°
60
°
90
°
120
°
180
°
C
°
相關(guān)PDF資料
PDF描述
2N6348 TRIACS Silicon Bidirectional Triode Thyristors
2N6349 TRIACS Silicon Bidirectional Triode Thyristors
2N6344AG Triacs Silicon Bidirectional Thyristors
2N6348AG Triacs Silicon Bidirectional Thyristors
2N6349AG Triacs Silicon Bidirectional Thyristors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6347A 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SILICON BIDIRECTIONAL THYRISTORS
2N6348 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:TO-220AB
2N6348A 功能描述:雙向可控硅 THY 12A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
2N6348AG 功能描述:雙向可控硅 雙向可控硅 RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
2N6349 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:TO-220AB
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