![](http://datasheet.mmic.net.cn/300000/2N6451_datasheet_16191493/2N6451_1.png)
01/99
B-25
2N6451, 2N6452
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
2N6451
– 20 V
– 20 V
10 mA
360 mW
2.88 mW/°C 2.88 mW/°C
2N6452
– 25 V
– 25 V
10 mA
360 mW
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
TOD72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature:
2N6451
2N6452
Process NJ132L
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
– 20
– 25
V
nA
nA
μA
μA
V
mA
I
G
= – 1 μA, V
DS
= V
V
GS
= – 10V, V
DS
= V
V
GS
= – 15V, V
DS
= V
V
GS
= – 10V, V
DS
= V
V
GS
= – 15V, V
DS
= V
V
DS
= 10V, I
D
= 0.5 nA
V
DS
= 10V, V
GS
= V
– 0.1
Gate Reverse Current
I
GSS
– 0.5
– 0.2
T
A
= 125°C
T
A
= 125°C
– 1
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
I
DSS
– 0.5 – 3.5 – 0.5 – 3.5
5
20
5
20
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
|Y
fs
|
15
30
15
30
mS
mS
μS
μS
pF
pF
pF
pF
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 5 mA
R
G
= 10 k
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 10 kHz
f = 1 kHz
Common Source
Output Conductance
|Y
os
|
50
50
Common Source
Input Capacitance
C
iss
25
25
Common Source Reverse
Transfer Capacitance
C
rss
5
5
Equivalent Short Circuit
Input Noise Voltage
ˉ
N
5
3
10
8
nV/
√
Hz
nV/
√
Hz
Noise Figure
NF
1.5
2.5
dB
f = 10 Hz
¥ Audio Amplifiers
¥ Low-Noise, High Gain
Amplifiers
¥ Low-Noise Preamplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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