- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄41445 > 2N6491DW (ON SEMICONDUCTOR) 15 A, 80 V, PNP, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N6491DW |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 15 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/61頁(yè) |
| 文件大?。?/td> | 367K |
| 代理商： | 2N6491DW |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)
3–132
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general–purpose amplifier and switching applications.
DC Current Gain Specified to 15 Amperes —
hFE = 20–150 @ IC = 5.0 Adc
hFE = 5.0 (Min) @ IC = 15 Adc
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) – 2N6487, 2N6490
VCEO(sus) = 80 Vdc (Min) – 2N6488, 2N6491
High Current Gain — Bandwidth Product
fT = 5.0 MHz (Min) @ IC = 1.0 Adc
TO–220AB Compact Package
MAXIMUM RATINGS (1)
Rating
Symbol
2N6487
2N6490
2N6488
2N6491
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
70
90
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
IC
15
Adc
Base Current
IB
5.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
75
0.6
Watts
W/
_C
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
1.8
0.014
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.67
_C/W
Thermal Resistance, Junction to Ambient
R
θJA
70
_C/W
(1) Indicates JEDEC Registered Data.
80
40
20
0
20
40
80
100
120
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
60
TA TC
4.0
2.0
1.0
3.0
0
60
140
TA
TC
0
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N6487
2N6488
2N6490
2N6491
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 80 VOLTS
75 WATTS
*
CASE 221A–06
TO–220AB
NPN
PNP
REV 7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6490AN | 15 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2N6488BU | 15 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2N6490AK | 15 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2N6487BS | 15 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2N6487BA | 15 A, 60 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6491G | 功能描述:兩極晶體管 - BJT 15A 80V 75W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6492 | 制造商:SAVANTIC 制造商全稱(chēng):Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6493 | 制造商:SAVANTIC 制造商全稱(chēng):Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6494 | 制造商:SAVANTIC 制造商全稱(chēng):Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6495 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 2PIN TO-66 - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。