參數(shù)資料
型號(hào)： 2N6577
廠商： CENTRAL SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： NPN SILICON POWER DARLINGTON TRANSISTOR
中文描述： 15 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
封裝： TO-3, 2 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 11K
代理商： 2N6577
2N5622
Bipolar NPN Device.
V
CEO
= 60V
I
C
= 10A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
60
V
I
C(CONT)
10
A
h
FE
@ 5/5 (V
CE
/ I
C
)
70
200
-
f
t
40M
Hz
P
D
100
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
31-Jul-02
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
1
2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
3
3
2
3
1
1
3.84 (0.151)
4.09 (0.161)
0
1
7.92 (0.312)
12.70 (0.50)
2
(
m
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
相關(guān)PDF資料
PDF描述
2N5622 COLLECTOR CURRENT = 10 AMPS NPN TYPES
2N5613 Bipolar PNP Device
2N6687 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
2N5619 Bipolar PNP Device in a Hermetically sealed to3 Metal Package.
2N5617 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6578 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON POWER DARLINGTON TRANSISTORS
2N6579 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 12A 3PIN TO-3 - Bulk
2N657A 功能描述:兩極晶體管 - BJT Small Signal Transistor Gen Purp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N658 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5
2N6580 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 400V 10A 3PIN TO-3 - Bulk
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