參數(shù)資料
型號(hào): 2N65L-TF3-T
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: JFETs
英文描述: 2 A, 650 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, TO-220F, 3 PIN
文件頁數(shù): 3/6頁
文件大?。?/td> 180K
代理商: 2N65L-TF3-T
2N65
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-370.a
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
10
30
ns
Turn-On Rise Time
tR
25
60
ns
Turn-Off Delay Time
tD(OFF)
20
50
ns
Turn-Off Fall Time
tF
VDD =300V, ID =2.4A, RG=25
(Note 1, 2)
25
60
ns
Total Gate Charge
QG
9.0
11
nC
Gate-Source Charge
QGS
1.6
nC
Gate-Drain Charge
QGD
VDS=480V, VGS=10V, ID=2.4A
(Note 1, 2)
4.3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
1.4
V
Continuous Drain-Source Current
ISD
2.0
A
Pulsed Drain-Source Current
ISM
8.0
A
Reverse Recovery Time
tRR
180
ns
Reverse Recovery Charge
QRR
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/μs (Note1)
0.72
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
相關(guān)PDF資料
PDF描述
2N65G-TF3-T 2 A, 650 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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