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參數(shù)資料
| 型號： | 2N65L-TM3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 650 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 180K |
| 代理商： | 2N65L-TM3-T |
2N65
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-370.a
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
Continuous
ID
2.0
A
Drain Current
Pulsed (Note 2)
IDM
8.0
A
Single Pulsed (Note 3)
EAS
140
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
54
W
TO-220F/TO-220F1
23
W
Power Dissipation
TO-251/TO-252
PD
44
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
UNIT
TO-220
62.5
°С/W
TO-220F/TO-220F1
62.5
°С/W
Junction to Ambient
TO-251/TO-252
θJA
50
°С/W
TO-220
2.32
°С/W
TO-220F/TO-220F1
5.5
°С/W
Junction to Case
TO-251/TO-252
θJc
2.87
°С/W
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650V, VGS = 0V
10
μA
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature
Coefficient
△
BVDSS/T
△ J ID = 250 μA, Referenced to 25°C
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
3.8
5
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
270 350
pF
Output Capacitance
COSS
40
50
pF
Reverse Transfer Capacitance
CRSS
VDS =25V, VGS =0V, f =1MHz
5
7
pF
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| 2N65L-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2 Amps, 650 Volts N-CHANNEL POWER MOSFET |
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| 2N65Z | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2A, 650V N-CHANNEL POWER MOSFET |
| 2N65ZG-TF1-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2A, 650V N-CHANNEL POWER MOSFET |
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