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參數(shù)資料
| 型號： | 2N6660C4A-JQRS.SEM |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HERMETIC SEALED PACKAGE-18 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 236K |
| 代理商： | 2N6660C4A-JQRS.SEM |
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660C4
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8382
Issue 1
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0
ID = 1.0A
60
V
VDS = VGS
ID = 1.0mA
0.8
2
TC = 125°C
0.3
VGS(th)
Gate Threshold Voltage
TC = -55°C
2.5
V
VGS = ±20V
VDS = 0V
±100
IGSS
Gate-Source Leakage Current
TC = 125°C
±500
nA
VGS = 0
VDS = 48V
1.0
IDSS
Zero Gate Voltage
Drain Current
TC = 125°C
100
A
ID(ON)(2)
On-State Drain Current
VDS = 10V
VGS = 10V
1.5
A
VGS = 5V
ID = 0.3A
5
VGS = 10V
ID = 1.0A
3
RDS(on)
(2)
Static Drain-Source
On-State Resistance
TC = 125°C
5
gfs
(2)
Forward Transconductance
VDS = 7.5V
ID = 525mA
170
m
VSD
(2)
Body Diode Forward Voltage
VGS = 0
IS = 1.0A
0.7
1.6
V
trr
(2)
Body Diode Reverse Recovery
VGS = 0
IS = 1.0A
350
ns
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
50
Coss
Output Capacitance
VDS = 25V
40
Crss
Reverse Transfer Capacitance
f = 1.0MHz
10
pF
td(on)
Turn-On Delay Time
VDD = 25V
10
td(off)
Turn-Off Delay Time
ID = 1.0A
RG = 50
10
ns
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