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參數(shù)資料
| 型號(hào)： | 2N6661-JQR-A |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 900 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 69K |
| 代理商： | 2N6661-JQR-A |
Document Number 3092
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS (T
CASE = 25°C unless otherwise stated)
VGS = 0V
ID = 10A
VDS = VGS
ID = 1mA
VGS = ±15V
VDS = 0V
TCASE = 125°C
VDS = 90V
VGS = 0V
VDS = 72V
VGS = 0V
TCASE = 125°C
VDS = 15V
VGS = 10V
VGS = 5V
ID = 0.3A
VGS = 10V
ID = 1A
TCASE = 125°C
VGS = 5V
ID = 0.3A
VGS = 10V
ID = 1A
TCASE = 125°C
VDS = 10V
ID = 0.5A
VDS = 10V
ID = 0.1A
VGS = 10V
ID = 1A
f = 1kHz
VDS = 24V
VGS = 0V
f = 1MHz
VDD = 25V
VGEN = 10V
RL = 23
RG = 25
ID = 1A
V(BR)DSS Drain – Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IGSS
Gate – Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
ID(on)*
On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
gFS*
Forward Transconductance
gOS*
Common Source Output Conductance
Small Signal Drain – Source
RDS(on)
On Resistance
Cds
Drain – Source Capacitance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
tON
Turn–On Time
tOFF
Turn–Off Time
90
120
0.8
1.6
2
±100
±500
10
500
1.5
1.8
4.2
5.3
3.6
4
6.8
9
1.26
1.6
3.6
4
6.8
9
170
350
225
3.6
4
30
40
35
50
15
40
210
610
810
V
nA
A
V
ms
s
pF
ns
2N6661
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: tp ≤ 80 s , δ≤ 1%
Parameter
Min.
Typ.
Max.
Unit
RθJA
Thermal Resistance, Junction to Ambient
170
K/W
RθJC
Thermal Resistance, Junction to Case
8.3
K/W
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N6661JTVP02 | 制造商:Vishay Siliconix 功能描述:19500/547 JANTXV2N6661P WITH PIND |
| 2N6661JTX02 | 制造商:Vishay Intertechnologies 功能描述:19500/547 JANTX2N6661 |
| 2N6661JTXL02 | 制造商:Vishay Siliconix 功能描述:WITH SOLDER DIP WAIVERED PART - Bulk |
| 2N6661JTXP02 | 制造商:Vishay Siliconix 功能描述:WITH PN D WAIVERED PART - Bulk |
| 2N6661JTXV02 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 90V 0.9A 3PIN TO-205AD - Bulk |
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