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參數(shù)資料
| 型號： | 2N6661 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 17K |
| 代理商： | 2N6661 |
Prelim. 6/94
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukELECTRICAL CHARACTERISTICS
(T
CASE
= 25°C unless otherwise stated)
Parameter
V
GS
= 0V
V
DS
= V
GS
V
GS
= ±15V
V
DS
= 0V
V
DS
= 90V
V
DS
= 72V
I
D
= 10
m
A
I
D
= 1mA
T
CASE
= 125°C
V
GS
= 0V
V
GS
= 0V
T
CASE
= 125°C
V
GS
= 10V
I
D
= 0.3A
V
DS
= 15V
V
GS
= 5V
V
GS
= 10V
I
D
= 1A
V
GS
= 5V
V
GS
= 10V
I
D
= 1A
V
DS
= 10V
V
DS
= 10V
T
CASE
= 125°C
I
D
= 0.3A
T
CASE
= 125°C
I
D
= 0.5A
I
D
= 0.1A
V
GS
= 10V
f = 1kHz
I
D
= 1A
V
DS
= 24V
V
GS
= 0V
f = 1MHz
V
DD
= 25V
R
L
= 23
W
I
D
= 1A
V
GEN
= 10V
R
G
= 25
W
V
(BR)DSS
Gate – Source Breakdown Voltage
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate – Body Leakage Current
I
DSS
Zero Gate Voltage Drain Current
I
D(on)*
On–State Drain Current
R
DS(on)*
Drain – Source On Resistance
V
DS(on)*
Drain – Source On Voltage
g
FS*
g
OS*
Forward Transconductance
Common Source Output Conductance
Small Signal Drain – Source
On Resistance
Drain – Source Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
C
ds
C
iss
C
oss
C
rss
t
ON
Turn–On Time
t
OFF
Turn–Off Time
LA B
S E M E
90
0.8
120
1.6
2
±100
±500
10
500
1.5
1.8
4.2
3.6
6.8
1.26
3.6
6.8
350
225
5.3
4
9
1.6
4
9
170
3.6
4
30
35
15
2
40
50
40
10
6
10
8
10
V
nA
m
A
A
W
V
ms
m
s
W
pF
ns
2N6661
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: t
p
￡
80
m
s ,
d ￡
1%
Test Conditions
Min.
Typ.
Max.
Unit
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| 2N6673 | POWER TRANSISTORS TO-3 CASE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6661_10 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6661_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 90 V (D-S) MOSFET |
| 2N6661-2 | 功能描述:MOSFET 90V 0.86A 6.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6661CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6661DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL N–CHANNEL ENHANCEMENT MODE |
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