參數(shù)資料
型號(hào): 2N6667
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: CASE 221A-06, 3 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 168K
代理商: 2N6667
2N6667 2N6668
3–4
Motorola Bipolar Power Transistor Device Data
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
0.1
Figure 9. Typical DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.2
0.3
0.5
0.7
1
2
10
500
300
h
FE
,DC
CURRENT
GAIN
TJ = 150°C
VCE = 3 V
200
7
20,000
5000
10,000
3000
2000
1000
3
5
Figure 10. Typical Collector Saturation Region
2.6
IB, BASE CURRENT (mA)
0.3
0.5
1
2
3
5
7
30
2.2
1.8
1.4
1
IC = 2 A
TJ = 25°C
4 A
6 A
0.6
0.7
20
10
TJ = – 55°C
7000
700
TJ = 25°C
IC, COLLECTOR CURRENT (AMPS)
VBE(sat) @ IC/IB = 250
V
,VOL
TAGE
(VOL
TS)
Figure 11. Typical “On” Voltages
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 3 V
0.1
0.2 0.3
0.5
0.7
1
2
10
7
3
5
3
2
1.5
1
0.5
Figure 12. Typical Temperature Coefficients
+ 3
+ 2
0
– 1
– 2
– 3
+ 5
+ 4
+ 1
2.5
0.1
0.2 0.3
0.5 0.7
1
2
10
7
3
5
IC, COLLECTOR CURRENT (AMP)
V
,TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
– 55
°C to 25°C
25
°C to 150°C
– 55
°C to 25°C
25
°C to 150°C
θVB for VBE
– 4
– 5
θVC for VCE(sat)
hFE @ VCE + 3.0 V
3
*IC/IB ≤
105
Figure 13. Typical Collector Cut–Off Region
VBE, BASE–EMITTER VOLTAGE (VOLTS)
102
101
100
,COLLECT
OR
CURRENT
(
A)
I C
10– 1
VCE = 30 V
TJ = 150°C
100
°C
25
°C
REVERSE
FORWARD
103
104
+ 0.2
+ 0.4
0
– 0.2
– 0.4 – 0.6 – 0.8
– 1.2 – 1.4
– 1
+ 0.6
相關(guān)PDF資料
PDF描述
2N6667 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2N6668BU 10 A, 80 V, PNP, Si, POWER TRANSISTOR
2N6667BD 10 A, 60 V, PNP, Si, POWER TRANSISTOR
2N6667BA 10 A, 60 V, PNP, Si, POWER TRANSISTOR
2N6667AF 10 A, 60 V, PNP, Si, POWER TRANSISTOR
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