參數(shù)資料
型號: 2N6674LEADFREE
廠商: CENTRAL SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3
封裝: TO-3, 2 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 461K
代理商: 2N6674LEADFREE
2N6674
2N6675
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6674, 2N6675
types are NPN Silicon Triple Diffused Mesa Power
Transistors designed for high voltage switching
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C)
SYMBOL
2N6674
2N6675
UNITS
Collector-Emitter Voltage
VCEV
450
650
V
Collector-Emitter Voltage
VCEO
300
400
V
Emitter-Base Voltage
VEBO
7.0
V
Continuous Collector Current
IC
15
A
Peak Collector Current
ICM
20
A
Continuous Base Current
IB
5.0
A
Power Dissipation
PD
175
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
ΘJC
1.0
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEV
VCE=Rated VCEV, VBE=1.5V
0.1
mA
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
1.0
mA
IEBO
VEB=7.0V
2.0
mA
BVCEO
IC=200mA (2N6674)
300
V
BVCEO
IC=200mA (2N6675)
400
V
VCE(SAT) IC=10A, IB=2.0A
1.0
V
VCE(SAT) IC=10A, IB=2.0A, TC=100°C
2.0
V
VCE(SAT) IC=15A, IB=5.0A
5.0
V
VBE(SAT)
IC=10A, IB=2.0A
1.5
V
hFE
VCE=2.0V, IC=10A
8.0
20
IS/b
VCE=30V, IC=5.9A
1.0
s
IS/b
VCE=100V, IC=250mA
1.0
s
hfe
VCE=10V, IC=1.0A, f=5.0MHz
3.0
10
ft
VCE=10V, IC=1.0A, f=5.0MHz
15
50
MHz
Cob
VCB=10V, IE=0, f=100kHz
150
500
pF
TO-3 CASE
R1 (10-March 2011)
www.centr a lsemi.com
相關(guān)PDF資料
PDF描述
2N6674 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N6677 15 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-3
2N6691 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-61
2N6704-6203 7 A, 130 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6703-6200 7 A, 110 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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