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參數(shù)資料
| 型號： | 2N6782 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL POWER MOSFET |
| 中文描述： | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 23K |
| 代理商： | 2N6782 |
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
V
nA
mA
A
V
W
V
S (
é
)
pF
ns
A
A
V
V
°C\W
THERMAL CHARACTERISTICS
2N6782
6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
100*
2*
1*
4.0*
4.0*
100*
200*
-100*
0.25*
1*
3.5
2.1*
0.6*
1.08*
1.0*
60*
40*
10*
3.0*
200*
100*
25*
15*
25*
25*
20*
-3.5*
-8
-0.75*
-1.5*
200
8.33*
170
V
GS
= 0
V
DS
= V
GS
I
D
= 0.25mA
I
D
= 0.5A
T
A
= 125°C
I
D
= 0.5A
T
A
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 0.8 Max.
V
DS
= Max.
Ratings V
GS
=0
Ratings V
GS
=0
T
C
= 125°C
V
GS
= 10V
V
DS
3
2V
DS(ON)
V
GS
= 10V
I
D
= 3.5A
V
GS
=
10V
I
D
= 2.25A
T
C
= 125°C
V
DS
3
2V
DS(ON)
I
DS
= 2.25A
V
GS
= 0
f = 1MHz
V
DS
= 25V
V
DD
= 34V
R
G
= 25
W
(MOSFET switching times are essentially
I
D
= 2.25A
R
L
= 15
W
independent of operating temperature.)
MOdified MOS POWER
symbol showing the intergal
P-N junction rectifier.
I
S
= -3.5A
T
C
= 25°C
I
F
=I
S
d
i
/ d
t
=
100A/
m
s
V
GS
= 0
T
J
= 150°C
Free Air Operation
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Forward
Gate Body Leakage Reverse
Zero Gate Voltage Drain Current
On State Drain Current1
Static Drain Source On-State
Voltage1
Static Drain Source On-State
Resistance1
DYNAMIC CHARACTERISTICS
Forward Transductance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
BODY
–
DRAIN DIODE RATINGS & CHARACTERISTICS
Continuous Source Current Body
Diode
Source Current1 (Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
BV
DSS
V
GS(th)
I
GSSF
I
GSSR
I
DSS
I
D(on)
V
DS(on)
R
DS(on)
gfs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
R
q
JC
R
q
JPC
Notes
1) Pulse Test: Pulse Width
￡
300
m
s,
d ￡
2%
* JEDEC registered Values
Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board
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| 2N6796 | TMOS FET TRANSISTOR N - CHANNEL |
| 2N6796 | 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6782 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 |
| 2N6782_01 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL POWER MOSFET ENHANCEMENT MODE |
| 2N6782_11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6782_12 | 制造商:MAS 制造商全稱:MAS 功能描述:This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications. |
| 2N6782JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
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