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參數(shù)資料
| 型號(hào)： | 2N6782LCC4E4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, LCC-18 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | 2N6782LCC4E4 |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V/°C
Ω
V
S (
)
μA
nA
pF
nC
ns
A
V
ns
μC
°C/W
Ω
THERMAL CHARACTERISTICS
2N6782LCC4
IRFE110
Document Number 5517
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
100
0.12
0.6
0.69
24
0.8
25
250
100
–100
190
86
13
6.6
1.7
3.5
15
25
20
3.5
14
1.5
180
2.0
Negligible
8.3
27
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 2.25A
VGS = 10V
ID = 3.5A
VDS = VGS
ID = 250μA
VDS ≥ 15V
IDS = 2.25A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 3.5A
VDS = 0.5BVDSS
VDD = 50V
ID = 3.1A
RG = 7.5Ω
IS = 3.5A
TJ = 25°C
VGS = 0
IF = 3.5A
TJ = 25°C
di / dt ≤ 100A/μsVDD ≤ 50V
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Gate Threshold Voltage
Forward Transconductance 1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge 1
Forward Turn–On Time
BVDSS
ΔBVDSS
ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
RθJC
RθJPC
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
≤ 300ms, δ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6782R1 | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6782.MODR1 | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6784 | 2.25 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6784TX | 2.25 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6784 | 2.25 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6782U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| 2N6783 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-39 |
| 2N6784 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 2.25A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET, 200V, 2.25A, TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:2.25A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39 |
| 2N6784JANTX | 制造商:Int'L Rectifier 功能描述:Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39 |
| 2N6784JANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39 |
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