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參數(shù)資料
| 型號(hào)： | 2N6788.MOD |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 100 V, 0.345 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | 2N6788.MOD |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
nA
A
S ( )
pF
ns
nC
V
A
V
ns
C
2N6788
IRFF120
Document Number 5513
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
100
2.0
4.0
100
-100
25
250
0.30
0.345
1.5
350
150
24
40
70
40
70
7.7
17
0.7
4.0
2.0
7.7
6.0
24
1.8
240
2.0
VGS = 0
ID = 1.0mA
VDS = VGS
ID = 250A
VGS = 20V
VGS = -20V
VDS = 80V.
VGS =0
TC = 125°C
VGS = 10V
ID = 3.5A
VGS = 10V
ID = 6.0A
VDS = 15V
IDS = 3.5A
VGS = 0
VDS = 25V
f = 1MHz
VDD = 50V
ID = 6.0A
RG = 7.5
VGS = 10V
(MOSFET switching times are essentially
independent of operating temperature.)
VGS = 10V
ID = 6.0A
VDS = 50V
Modified MOS POWER
symbol showing the intergal
P-N junction rectifier.
IS = 6.0A
VGS = 0
TJ = 25°C
IF = 6.0A
TJ = 25°C
di / dt = 100A/sVDD = 50V
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Forward
Gate Body Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain Source On-State
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate To Source Charge
Gate To Drain (“Miller”) Charge
Continuous Source Current (Body
Diode)
Source Current (Body Diode)
Diode Forward Voltage*
Reverse Recovery Time
Reverse Recovery Charge
BVDSS
VGS(th)*
IGSSF
IGSSR
IDSS
RDS(on)*
gfs*
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
ISM
VSD
trr
QRR
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
,
5
/
Notes
* Pulse Test: Pulse Width
≤ 300s, δ≤ 2%
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| 2N6790TXV | 3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6788U | 制造商:Microsemi Corporation 功能描述:2N6788U - Bulk |
| 2N6789 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-39 |
| 2N678A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 15A I(C) | TO-3 |
| 2N678B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 15A I(C) | TO-3 |
| 2N678C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 15A I(C) | TO-3 |
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