參數資料
型號: 2N6790
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 3.5A, 200V, 0.800 Ohm, N-Channel Power
中文描述: 3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數: 4/7頁
文件大小: 86K
代理商: 2N6790
2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
0
10
4
0
I
D
,
10V
9V
8V
6V
V
GS
= 7V
5V
80
μ
s PULSE TEST
8
12
4V
I
D
,
O
8
4
2
V
GS
,
GATE TO SOURCE VOLTAGE (V)
4
8
12
6
16
125
o
C
25
o
C
-55
o
C
0
V
DS
> I
D(ON)
x r
DS(ON)
MAX
80
μ
s PULSE TEST
r
D
,
I
D
,
DRAIN CURRENT (A)
1.0
0.5
0
0
10
15
R
)
V
GS
= 20V
V
GS
= 10V
1.5
20
5
PULSE DURATION = 2.0
μ
s
INITIAL T
J
= 25
C
1.4
1.0
0.6
-40
0
40
120
150
T
J
,
JUNCTION TEMPERATURE (
o
C)
N
2.2
0.2
80
1.8
V
GS
= 10V
I
D
= 2A
1.25
1.05
0.85
0
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
-40
40
80
120
B
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
1000
800
600
400
200
0
10
C
ISS
C
OSS
C
RSS
20
30
40
50
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
0
2N6790
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