參數(shù)資料
型號(hào)： 2N6794LCC4
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 1.5A I(D) | LLCC
中文描述： 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 1.5AI（四）| LLCC
文件頁數(shù)： 1/2頁
文件大小： 17K
代理商： 2N6794LCC4
IRFE130
10/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
(V
GS
= 10V , T
case
= 25°C)
(V
GS
= 10V , T
case
= 100°C)
E
AS
dv/dt
T
J
, T
stg
±20V
7.4A
4.7A
30A
22W
0.17W/°C
75mJ
5.5V/ns
-55 to +150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
FEATURES
SURFACE MOUNT
SMALL FOORPRINT
HERMETICALLY SEALED
DYNAMIC dv/dt RATING
AVALANCHE ENERGY RATING
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
LCC4
Notes
1) Pulse Test: Pulse Width
≤
300
μ
s,
δ ≤
2%
2) @ V
DD
= 50V , L
≥
570
μ
H , R
G
= 25
, Peak I
L
= 14A , Starting T
J
= 25°C
3) @ I
SD
≤
14A , di/dt
≤
140A/
μ
s , V
DD
≤
BV
DSS
, T
J
≤
150°C , Suggested R
G
= 7.5
V
DSS
I
D(cont)
R
DS(on)
100V
7.44A
0.207
1.39 (0.055)
1.15 (0.045)
0.76 (0.030)
0.51 (0.020)
1.39 (0.055)
1.02 (0.040)
15 16
13
12
14
3
4
5
6
7
17
18
1
2
11
10
8
9
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
≈
2.16 (0.085)
7.62 (0.300)
7.12 (0.280)
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
0.43 (0.017)
Rad.
Rad.
MOSFET
GATE
DRAIN
SOURCE
TRANSISTOR
BASE
COLLECTOR
EMITTER
PINS
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
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