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參數(shù)資料
| 型號： | 2N6794LCC4E4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 1.5 A, 500 V, 3.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC4-18 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | 2N6794LCC4E4 |
2N6794LCC4
Document Number 2947
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 1A
VGS = 10V
ID = 1.5A
VDS = VGS
ID = 250A
VDS ≥ 15V
IDS = 1A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 1.5A
VDS = 0.5BVDS
ID =1.5A
VDS = 0.5BVDS
VDD = 250V
ID = 1.5A
RG = 7.5
IS = 1.5A
TJ = 25°C
VGS = 0
IF = 1.5A
TJ = 25°C
di / dt ≤ 100A/sVDD ≤ 50V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
500
0.43
3
3.45
24
1
25
250
100
–100
350
80
35
7.3
16.7
0.1
3
3.7
8.7
40
30
60
30
1.5
6.5
1.2
900
5.9
Negligible
5.0
15.0
V
V/°C
V
S(
A
nA
pF
nC
ns
A
V
ns
C
nH
BVDSS
BV
DSS
T
J
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
STATIC ELECTRICAL RATINGS
Notes 1) Pulse Test: Pulse Width
≤ 300s, δ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
(
)
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