參數(shù)資料
型號： 2N6795
英文描述： 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
中文描述： 5個引腳µ帶看門狗和手動復位的P監(jiān)控電路
文件頁數(shù)： 2/2頁
文件大?。?/td> 17K
代理商： 2N6795
IRFE130
10/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
100
0.10
0.18
0.207
4
2
3
25
250
100
–100
650
240
44
12.8
1.0
3.8
28.5
6.3
16.6
30
75
40
45
7.4
30
1.5
300
3.0
Negligible
1.8
4.3
5.8
19
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
I
D
= 1mA
I
D
= 4.7A
I
D
= 7.4A
I
D
= 250mA
I
DS
= 4.7A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 7.4A
V
DS
= 0.5BV
DSS
V
DD
= 50V
I
D
= 7.4A
R
G
= 7.5
I
S
= 7.4A
V
GS
= 0
I
F
= 7.4A
d
i
/ d
t
≤
100A/
μ
s V
DD
≤
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
Forward Turn–On Time
PACKAGE CHARACTERISTICS
V
V/°C
V
S (
é
)
μ
A
nA
pF
nC
ns
A
V
ns
μ
C
nH
°C/W
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
R
θ
JC
R
θ
JPC
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board
相關PDF資料
PDF描述
2N6798U N-Channel
2N6796 100V, 8.0A, N-Channel, Enhancement Mode Power MOSFET(100V, 8.0A,N溝道，增強模式功率MOS場效應管)
2N6798 200V, 5.5A, N-Channel, Enhancement Mode Power MOSFET(200V, 5.5A,N溝道，增強模式功率MOS場效應管)
2N6800 400V, 3.0A, N-Channel, Enhancement Mode Power MOSFET(400V, 3.0A,N溝道，增強模式功率MOS場效應管)
2N6802 500V, 2.5A, N-Channel, Enhancement Mode Power MOSFET(500V, 2.5A,N溝道，增強模式功率MOS場效應管)
相關代理商/技術參數(shù)
參數(shù)描述
2N6796 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 32A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 8A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET 100V 8A TO- 制造商:International Rectifier 功能描述:MOSFET N TO-39 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 制造商:International Rectifier 功能描述:MOSFET, N, TO-39 制造商:TT Electronics/ Semelab 功能描述:MOSFET, N, TO-39 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 100V, 8A TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No 制造商:SEMELAB 功能描述:MOSFET, N, TO-39; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:25W ;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET N-Channel 100V 8A TO-39
2N6796 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39
2N6796_03 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL
2N6796_10 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET
2N6796JANTX 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述:
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