- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369051 > 2N6796 100V, 8.0A, N-Channel, Enhancement Mode Power MOSFET(100V, 8.0A,N溝道，增強模式功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | 2N6796 |
| 英文描述： | 100V, 8.0A, N-Channel, Enhancement Mode Power MOSFET(100V, 8.0A,N溝道，增強模式功率MOS場效應(yīng)管) |
| 中文描述： | 100V的，8.0A，N溝道，增強模式功率MOSFET（100V的，8.0A，?溝道，增強模式功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 2N6796 |
Parameter
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
Drain-Source
Breakdown Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain
Current
Gate -to-Source Leakage Forward
Gate -to-Source Leakage Reverse
On-state Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
100
V
V
GS
= 0V, I
D
=1.0 mA,
R
DS(on)
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
---
--
--
--
--
--
--
--
--
--
--
.18
.195
4.0
25
250
100
-100
28.5
6.3
16.6
30
75
40
45
V
GS
= 10 V, I
D
= 5.0 A
3
V
GS
= 10 V, I
D
= 8.0 A
3
V
DS
= V
GS
,
D
= 250 μA
V
DS
= 80 V, V
GS
= 0V
V
DS
= 80 V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20 V
V
GS
= -20 V
V
GS
= 10 V, I
D
= 8A
V
DS
= 50 V
See note 4
V
DD
= 30 V, I
D
= 5.0 A, R
G
=7.5
See note 4
V
GS(th)
I
DSS
V
μA
I
GSS
I
GSS
Q
G(on)
Q
GS
Q
Gd
t
D(on)
t
r
t
D(off)
t
r
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
V
SD
Diode Forward Voltage
t
tr
Reverse Recovery Time
3
Min.
--
--
Typ.
--
--
Max.
1.5
300
Units
V
ns
Test Conditions
T
J
= 25°C, I
S
= 8.0A
3
,VG S= 0 V
3
T
J
= 25°C, I
F
= 8.0 A,di/dt < 100 A/μs
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Min.
--
--
--
Typ.
--
0.21
--
Max.
5.0
--
175
Units
Test Conditions
Mounting surface flat,
smooth, and greased
Typical socket mount
°C/W
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
D D
= 25 V, Starting T
J
= 25°C, L = 100 μH + 10%, R
G
= 25 , Peak I
L
= 8.0 A
3. Pulse width < 300 μs; Duty Cycle <2 %
4. See MIL-S-19500/557
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N6796
Units
I
D
@ V
GS
= 10V, T
C
= 25°C
Continuous Drain Current
8.0
A
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
5.0
A
I
D M
Pulsed Drain Current
1
32
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
25
W
Linear Derating Factor
0.2
W/°C
V
G S
Gate-Source Voltage
± 20
V
E
AS
T
J
T
STG
Single Pulse Avalanche Energy
2
Operating Junction
Storage Temperature Range
Lead Temperature
4.3
4
mJ
-55 to 150
°C
300(.06 from case for 10 sec)
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted
2N6796, JANTX2N6796 JANTXV2N6796
2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800
2N6802, JANTX2N6802, JANTXV2N6802
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6798 | 200V, 5.5A, N-Channel, Enhancement Mode Power MOSFET(200V, 5.5A,N溝道，增強模式功率MOS場效應(yīng)管) |
| 2N6800 | 400V, 3.0A, N-Channel, Enhancement Mode Power MOSFET(400V, 3.0A,N溝道，增強模式功率MOS場效應(yīng)管) |
| 2N6802 | 500V, 2.5A, N-Channel, Enhancement Mode Power MOSFET(500V, 2.5A,N溝道，增強模式功率MOS場效應(yīng)管) |
| 2N6800 | N-CHANNEL POWER MOSFET |
| 2N6823 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6796 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 |
| 2N6796_03 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL |
| 2N6796_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6796JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
| 2N6796JANTXV | 制造商:International Rectifier 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。