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參數(shù)資料
| 型號(hào)： | 2N6975 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 5 A, 400 V, N-CHANNEL IGBT, TO-204AA |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | 2N6975 |
2001 Fairchild Semiconductor Corporation
2N6975, 2N6976, 2N6977, 2N6978 Rev. A
Specications 2N6975, 2N6976, 2N6977, 2N6978
Electrical Specications
TC = +25∞
oC, Unless Otherwise Specied
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
S
2N6975/2N6977
2N6976/2N6978
MIN
MAX
MIN
MAX
Collector-Emitter
Breakdown Voltage
BVCES
lC = 1 mA, VGE = 0
400
(Note 1)
-
∞
500
(Note 1)
-V
Gate Threshold Voltage
VGE(TH)
VGE = VCE, IC = 1mA
2
∞
(Note 1)
4.5
(Note 1)
2
(Note 1)
4.5
∞
(Note 1)
V
Zero Gate Voltage Collector
Current
lCES
VCE = 400V
-
250
(Note 1)
--
A
VCE = 500V
-
250
(Note 1)
A
TC = +125
oC
----
A
VCE = 400V
-
∞1000
(Note 1)
--
A
VCE = 500V
-
1000
(Note 1)
A
Gate-Emitter Leakage Current
IGES
VGE = ±20V, VCE = 0V
-
100
(Note 1)
-
100
(Note 1)
ns
Reverse Collector-Emitter
Leakage Current
IECS
RGE = 0, VEC = 5V
-
5
(Note 1)
-5
(Note 1)
mA
Collector-Emitter On Voltage
VCE(ON)
IC = 5A, VGE = 10V
-
2
(Note 1)
-2
(Note 1)
V
IC = 10A, VGE = 20V
-
2.5
-
2.5
V
Gate-Emitter Plateau Voltage
VGEP
IC = 5A, VCE = 10V
3.4
(Note 1)
6.8
(Note 1)
3.4
(Note 1)
6.8
(Note 1)
V
On-State Gate Charge
QG(ON)
IC = 5A, VCE = 10V
12
(Note 1)
25
(Note 1)
12
(Note 1)
25
(Note 1)
nC
Turn-On Delay Time
tD(ON)
IC = 5A
VCE(CLP) = 300V
L = 50
H
TJ = +125
oC
VGE = 10V
RG = 50
50 Max
ns
Rise Time
tR
50 Max
ns
Turn-Off Delay Time
tD(ON)
400 Max
(Note 1)
ns
Fall Time
tFI
2N6975
2N6976
1000 Max
(Note 1)
ns
2N6977
2N6978
500 Max
(Note 1)
ns
Turn-Off
Energy Loss per Cycle
(Off Switching Dissipation=
WOFF x Frequency)
WOFF
IC = 5A
VCE(CLP) = 300V
L = 50
H
TJ = +125
oC
VGE = 10V
RG = 50
2N6975
2N6976
1000 Max
(Note 1)
J
2N6977
2N6978
500 Max
(Note 1)
J
Thermal Resistance
Junction-to-Case
RθJC
1.25
(Note 1)
oC/W
NOTE:
1. JEDEC registered value.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6976 | 5 A, 500 V, N-CHANNEL IGBT, TO-204AA |
| 2N697 | NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N6987 | POWER TRANSISTOR, TO-116 |
| 2N6988 | SMALL SIGNAL TRANSISTOR |
| 2N6989 | Si, POWER TRANSISTOR, TO-116 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6976 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 400V and 500V N-Channel IGBTs |
| 2N6977 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 400V and 500V N-Channel IGBTs |
| 2N6978 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 400V and 500V N-Channel IGBTs |
| 2N697A | 功能描述:兩極晶體管 - BJT NPN Med Pwr RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N697S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 3PIN TO-5 - Bulk |
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