參數(shù)資料
型號: 2N7000/E7
廠商: GENERAL SEMICONDUCTOR INC
元件分類: 小信號晶體管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
封裝: PLASTIC, TO-92, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 259K
代理商: 2N7000/E7
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
ID = 100A, VGS = 0
60
90
V
Gate-Body Leakage Current
IGSS
VGS ± 20V, VDS = 0V
——
±10
nA
Drain Cutoff Current
IDSS
VDS = 48V, VGS = 0V
——
1
A
Gate-Source Threshold Voltage
VGS(th)
VGS = VDS, ID = 1.0mA
0.8
1.5
3
V
Drain-Source On-State Resistance
RDS(on)
VGS = 10V, ID = 500mA
3.5
5.0
Input Capacitance
Ciss
VDS = 25V, VGS = 0,
60
pF
f = 1MHz
Output Capacitance
Coss
VDS = 25V, VGS = 0,
25
pF
f = 1MHz
Feedback Capacitance
Crss
VDS = 25V, VGS = 0,
5
pF
f = 1MHz
Turn-On Time
ton
VGS = 10V, VDS = 10V
10
ns
Turn-Off Time
toff
RD = 100
10
ns
Source-Drain Diode
Parameter
Symbol
Test Condition
Value
Unit
Max. Forward Current (continuous)
IF
Tamb = 25 °C
500
mA
Diode Forward Voltage (typ.)
VSD
VGS = 0, IF = 0.5A
850
mV
Tj = 25°C
2N7000
DMOS Transistors (N-Channel)
相關(guān)PDF資料
PDF描述
2N7000-TR1 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
2N7000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
2N7000-TA 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
2N7000CSM-JQR-B 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7000CSM-JQR-BG4 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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