- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33295 > 2N7000-T92-K (UNISONIC TECHNOLOGIES CO LTD) 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 PDF資料下載
參數(shù)資料
| 型號： | 2N7000-T92-K |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 251K |
| 代理商： | 2N7000-T92-K |
2N7000
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-059.B
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RGS≤1M)
VDGR
60
V
Continuous
±20
V
Gate -Source Voltage
Non Repetitive (tp<50
s)
VGS
±40
V
Continuous
115
mA
Maximum Drain Current
Pulsed
ID
800
mA
Maximum Power Dissipation
Derated above 25
°C
PD
400
3.2
mW
mW/
°C
Operating and Storage Temperature
TJ,TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction-to-Ambient
θJA
312.5
°C/W
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=10 A
60
V
1
A
Drain-Source Leakage Current
IDSS
VDS=60V, VGS =0V
TJ=125°C
0.5
mA
Gate-Body leakage, Forward
IGSSF
VGS =20V, VDS=0V
100
nA
Gate-Body leakage Reverse
IGSSR
VGS =-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID=250A
1
2.1
2.5
V
VGS =10V, ID=500mA
TJ=100°C
1.2
1.7
7.5
13.5
Static Drain-Source On-Resistance
RDS(ON)
VGS =5.0V, ID=50mA
TJ=100°C
1.7
2.4
7.5
13.5
VGS = 10V, ID=500mA
0.6
3.75
Drain-Source On-Voltage
VDS(ON)
VGS = 5.0V, ID=50mA
0.09
1.5
V
On-State Drain Current
ID(ON)
VGS=10V, VDS 2VDS(ON)
500
2700
mA
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
20
50
pF
Output Capacitance
COSS
11
25
pF
Reverse Transfer Capacitance
CRSS
VDS=25V,VGS=0V, f=1.0MHz
4
5
pF
Turn-On Time
tON
VDD=30V, RL=150,
ID=200mA, VGS=10V, RGEN=25
20
ns
Turn-Off Time
tOFF
VDD=30V, RL=150, ID=200mA,
VGS=10V, RGEN=25
20
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward
Voltage
VSD
VGS=0V, Is=115mA(Note )
0.88
1.5
V
Maximum Continuous Drain-Source
Diode Forward Current
Is
115
mA
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
0.8
A
Note: Pulse Test: Pulse Width≤300s, Duty Cycle≤2.0%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7000-T92-R | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2N7000L | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
| 2N7000LTR | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
| 2N7000 | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
| 2N7002/E8 | 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7000TA | 功能描述:MOSFET 60V N-Channel Sm Sig RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000-TR1 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, N-Channel, TO-92VAR |
| 2N7000-TR7 | 制造商:Vishay Intertechnologies 功能描述:TO226 VNDS06 |
| 2N7000TRI | 制造商:SILICONIX 功能描述:2N7000 FORMED LEADS |
| 2N7000-TRI | 制造商:SILICONIX 功能描述:2N7000 FORMED LEADS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。