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參數(shù)資料
| 型號： | 2N7000 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 232K |
| 代理商： | 2N7000 |
FEATURES
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DMOS Transistors (N-Channel)
G
D
S
.181 (4.6)
mi
n.
.492
(12.5)
.181
(
4
.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 °C ambient temperature unless otherwise specified
.098 (2.5)
max.
.022 (0.55)
4/98
2N7000
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
Inverse Diode
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage
VDGS
60
V
Gate-Source Voltage (pulsed)
VGS
± 20
V
Drain Current (continuous)
ID
300
mA
Power Dissipation at Tamb = 25 °C
Ptot
8301)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Symbol
Value
Unit
Max. Forward Current (continuous)
at Tamb = 25 °C
IF
500
mA
Forward Voltage Drop (typ.)
at VGS = 0, IF = 0.5 A, Tj = 25 °C
VF
850
mV
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N-7000 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2N7000 AMO | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2N7000/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
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