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參數(shù)資料
| 型號： | 2N7000 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
| 封裝： | PLASTIC, TO-92, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 207K |
| 代理商： | 2N7000 |
2N7000
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88119
2
16-Jul-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
ID = 100
A, VGS = 0
60
90
—
V
Gate-Body Leakage Current
IGSS
VGS ± 20V, VDS = 0V
——
±10
nA
Drain Cutoff Current
IDSS
VDS = 48V, VGS = 0V
——
1
A
Gate-Source Threshold Voltage
VGS(th)
VGS = VDS, ID = 1.0mA
0.8
1.5
3
V
Drain-Source On-State Resistance
RDS(on)
VGS = 10V, ID = 500mA
—
3.5
5.0
Input Capacitance
Ciss
VDS = 25V, VGS = 0,
—
60
—
pF
f = 1MHz
Output Capacitance
Coss
VDS = 25V, VGS = 0,
—
25
—
pF
f = 1MHz
Feedback Capacitance
Crss
VDS = 25V, VGS = 0,
—
5
—
pF
f = 1MHz
Turn-On Time
ton
VGS = 10V, VDS = 10V
—
10
—
ns
Turn-Off Time
toff
RD = 100
—
10
—
ns
Source-Drain Diode
Parameter
Symbol
Test Condition
Value
Unit
Max. Forward Current (continuous)
IF
Tamb = 25 °C
500
mA
Diode Forward Voltage (typ.)
VSD
VGS = 0, IF = 0.5A
850
mV
Tj = 25°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N-7000 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2N7000 AMO | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2N7000/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
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