參數(shù)資料
型號(hào)： 2N7000P003
廠商： SUPERTEX INC
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： TO-92, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 524K
代理商： 2N7000P003
2
2N7000
Electrical Characteristics (T
A = 25°C unless otherwise specied)
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
Drain-to-source breakdown voltage
60
-
V
GS = 0V, ID = 10A
V
GS(th)
Gate threshold voltage
0.8
-
3.0
V
GS = VDS, ID = 1.0mA
I
GSS
Gate body leakage current
-
10
nA
V
GS = ±15V, VDS = 0V
I
DSS
Zero gate voltage drain current
-
1.0
A
V
GS = 0V, VDS = 48V
-
1.0
mA
V
GS = 0V, VDS = 48V,
T
A = 125
OC
I
D(ON)
ON-state drain current
75
-
mA
V
GS = 4.5V, VDS = 10V
R
DS(ON)
Static drain-to-source
ON-state resistance
-
5.3
Ω
V
GS = 4.5V, ID = 75mA
-
5.0
V
GS = 10V, ID = 500mA
G
FS
Forward transconductance
100
-
mmho
V
DS = 10V, ID = 200mA
C
ISS
Input capacitance
-
60
pF
V
GS = 0V, VDS = 25V,
f = 1.0MHz
C
OSS
Common source output capacitance
-
25
C
RSS
Reverse transfer capacitance
-
5
t
(ON)
Turn-ON time
-
10
ns
V
DD = 15V, ID = 500mA,
R
GEN = 25
t
(OFF)
Turn-OFF time
-
10
V
SD
Diode forward voltage drop
-
0.85
-
V
GS = 0V, ISD = 200mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
Device
Package
I
D
(continuous)*
(mA)
I
D
(pulsed)
(mA)
Power Dissipation
@T
C = 25
OC
(W)
θ
JC
(
OC/W)
θ
JA
(
OC/W)
I
DR
*
(mA)
I
DRM
(mA)
2N7000
TO-92
200
500
1.0
125
170
200
500
Notes:
* I
D (continuous) is limited by max rated TJ.
90%
10%
90%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
OUTPUT
10V
V
DD
RGEN
0V
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