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參數(shù)資料
| 型號： | 2N7000TAD75Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2N7000TAD75Z |
N-CHANNEL
Small Signal MOSFET
Electrical Characteristics (T
C=25℃ unless otherwise specified)
Drain-Source Breakdown Voltage
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
②
Forward Transconductance
②
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
BV
DSS
R
DS(on)
I
GSS
I
DSS
V
nA
μA
pF
ns
--
0.1
--
V
GS=0V,ID=250μA
V
DS= VGS,ID=250μA
V
DS= VGS,ID=1mA
V
GS=15V
V
GS=-15V
V
DS=60V
V
DS=45V,TC=125℃
V
GS=10V,ID=0.5A
V
DS=15V,ID=0.5A
V
DD=30V,ID=0.5A,
R
G=15
②③
Drain-to-Source Leakage Current
V
GS=0V,VDS=25V,
f =1MHz
2N7000BU/2N7000TA
60
0.3
0.4
--
12
3.0
--
3.9
2.2
100
-100
250
1000
5.0
--
10
0.3
30
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
③ Essentially Independent of Operating Temperature
S
V
GS(th)
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Gate Threshold Voltage
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 2N7000-TR1 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, N-Channel, TO-92VAR |
| 2N7000-TR7 | 制造商:Vishay Intertechnologies 功能描述:TO226 VNDS06 |
| 2N7000TRI | 制造商:SILICONIX 功能描述:2N7000 FORMED LEADS |
| 2N7000-TRI | 制造商:SILICONIX 功能描述:2N7000 FORMED LEADS |
| 2N7000Z | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET |
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