參數(shù)資料
型號(hào)： 2N7000ZL1
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： Compact Power Relay, 2 Form C, 10A 250VAC 10A 30VDC
中文描述： 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： CASE 29-11, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 232K
代理商： 2N7000ZL1
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
2N7000
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at ID = 100 A, VGS = 0 V
V(BR)DSS
60
90
–
V
Gate-Body Leakage Current, Forward
at VGSF = 20 V, VDS = 0 V
IGSSF
––10
nA
Gate-Body Leakage Current, Reverse
at VGSR = –20 V, VDS = 0 V
IGSSR
–
–10
nA
Drain Cutoff Current
at VDS = 48 V, VGS = 0 V
IDSS
––1
A
Gate-Source Threshold Voltage
at VGS = VDS, ID = 1.0 mA
VGS(th)
0.8
1.5
3
V
Drain-Source ON Resistance
at VGS = 10 V, ID = 500 mA
RDS(ON)
–3.5
5.0
Capacitance
at VDS = 25 V, VGS = 0 V, f = 1 MHz
Input Capacitance
Output Capacitance
Feedback Capacitance
CiSS
COSS
CrSS
–
60
25
5
–
pF
Switching Times
at VGS = 10 V, VDS = 10 V, RD = 100
Turn-On Time
Turn-Off Time
ton
toff
–
10
–
ns
Thermal Resistance Junction to Ambient Air
RthJA
–
1501)
K/W
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
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