參數(shù)資料
型號(hào): 2N7002K
元件分類: 小信號(hào)晶體管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SOT-23, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 68K
代理商: 2N7002K
2009. 11. 17
1/4
SEMICONDUCTOR
TECHNICAL DATA
2N7002K
N Channel MOSFET
ESD Protected 2000V
Revision No : 2
INTERFACE AND SWITCHING APPLICATION.
FEATURES
ESD Protected 2000V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. SOURCE
2. GATE
3. DRAIN
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=10 A
60
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
-
1
A
Gate-Body Leakage, Forward
IGSSF
VGS=20V, VDS=0V
-
10
A
Gate-Body Leakage, Reverse
IGSSR
VGS=-20V, VDS=0V
-
-10
A
G
D
S
Type Name
Marking
Lot No.
WC
EQUIVALENT CIRCUIT
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
20
V
Drain Current
Continuous
ID
300
mA
Pulsed (Note 1)
IDP
1200
Drain Power Dissipation (Note 2)
PD
300
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
Note 1) Pulse Width
10
, Duty Cycle
1%
Note 2) Package mounted on a glass epoxy PCB(100mm2
1mm)
相關(guān)PDF資料
PDF描述
2N7002K 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
2N7002L6327 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002LT1H 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
2N7002LT3H 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
2N7002L 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002K / T1 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET 制造商:Vishay Siliconix 功能描述:TRANSISTOR, MOSFET
2N7002K _R1 _00001 制造商:PanJit Touch Screens 功能描述:
2N7002K,215 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002K 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.34A SOT23
2N7002K_ R2 _00001 制造商:PanJit Touch Screens 功能描述: