參數(shù)資料
型號(hào): 2N7002L6327
廠商: INFINEON TECHNOLOGIES AG
元件分類: 小信號(hào)晶體管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: GREEN, PLASTIC PACKAGE-3
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 278K
代理商: 2N7002L6327
2N7002
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
(2)
R thJA
-
250
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS= 0 V, I D=250 A
60
-
V
Gate threshold voltage
V GS(th)
V DS=0 V, I D=250 A
1.5
2.1
2.5
Drain-source leakage current
I D (off)
V DS=60 V,
V GS=0 V, T j=25 °C
-
0.1
A
V DS=60 V,
V GS=0 V, T j=150 °C
--
5
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
10
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=0.25 A
-
2.0
4
V GS=10 V, I D=0.5 A
-
1.6
3
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=0.24 A
0.2
0.36
-
S
Values
(2) Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70m thick and 20mm
long.
Rev. 2.1
page 2
2009-02-11
相關(guān)PDF資料
PDF描述
2N7002LT1H 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
2N7002LT3H 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
2N7002L 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002M 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002MT2 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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