參數(shù)資料
型號： 2N7002T-TP
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號晶體管
英文描述： 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù)： 3/4頁
文件大?。?/td> 140K
代理商： 2N7002T-TP
Revision: 4
2009/02/01
0
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0.1
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0.3
0.5
0.6
0.7
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0.9
1
01
2
3
4
5
I
,
DRAIN-SOURCE
CURRENT
(A)
D
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
V
= 10,7,6V
GS
V= 5V
GS
V= 4V
GS
V= 3V
GS
0.6
1
1.4
1.8
00.2
RN
O
RMALIZED
DRAIN-SOURCE
ON-RESIST
ANCE
DS(ON)
,
I , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current
D
V= 3V
GS
V= 4V
GS
V
= 5, 6, 7, 10V
GS
2.2
0.4
0.6
0.8
1.0
0.7
0.8
0.9
1.1
1
1.2
-50
-25
0
25
50
75
100
125
150
V,
N
O
RMALIZED
THRESH
O
LD
V
O
L
T
AGE
GS(th)
T , JUNCTION TEMPERATURE ( C)
Fig. 3 Gate Threshold Variation with Temperature
J
°
0.4
0.8
0.6
1.2
1.8
1.6
1.4
1
2.2
2
-50
-25
025
50
75
100
125
150
R,
N
O
RMALIZED
O
N-RESIST
ANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig. 4 On-Resistance Variation with Temperature
J
°
V= 10V
I = 500mA
GS
D
0
10
20
30
50
40
60
05
10
15
20
25
C,
CAP
ACIT
ANCE
(pF)
V
, DRAIN-SOURCE VOLTAGE (V)
Fig.5 Typical Capacitance
DS
C
iss
C
oss
C
rss
0.0
1.0
0.5
2.0
3.0
2.5
1.5
4.5
4.0
3.5
5.0
0
2
4
6
8
10
V , GATE-SOURCE VOLTAGE (V)
Fig. 6 On-Resistance vs. Gate-Source Voltage
GS
I = 50mA
D
MCC
2N7002T
TM
Micro Commercial Components
www.mccsemi.com
3 of 4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002V 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002V_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002V_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
2N7002V-7 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002V-7-F 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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