型號: | 2N7002T |
廠商: | VISHAY SILICONIX |
元件分類: | 小信號晶體管 |
英文描述: | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
文件頁數(shù): | 6/6頁 |
文件大?。?/td> | 173K |
代理商: | 2N7002T |
相關PDF資料 |
PDF描述 |
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2N7002TT1 | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
2N7000NOPTION4 | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
2N7000X | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
2N7000NOPTION3 | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
2N7000NOPTION2 | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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2N7002T T/R | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
2N7002T,215 | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
2N7002T/R | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, TO-236AB |
2N7002T_09 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
2N7002T_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |