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參數(shù)資料
| 型號(hào)： | 2N7002VC |
| 廠商： | Diodes Inc. |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 163K |
| 代理商： | 2N7002VC |
Lead-free Green
DS30639 Rev. 3 - 2
1 of 3
2N7002VC/VAC
www.diodes.com
Diodes Incorporated
2N7002VC/VAC
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 3)
"Green Device" (Note 4)
Maximum Ratings
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage R
GS
≤
1.0M
V
DGR
60
V
Gate-Source Voltage (Note 2)
Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 2)
Continuous
I
D
280
mA
Drain Current (Note 2) Pulsed
I
DM
1.5
A
Total Power Dissipation
P
d
150
mW
Thermal Resistance, Junction to Ambient
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
A
M
L
B C
H
K
G
D
Mechanical Data
S
1
D
1
D
2
S
2
G
1
G
2
Case: SOT-563
Case Material: Molded Plastic,
“Green” Molding
Compound
. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram (Note 1)
Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking: See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.003 grams (approximate)
SOT-563
Min
0.15
Dim
A
B
C
D
G
H
K
L
M
Max
0.30
Typ
0.25
1.10
1.25
1.20
1.55
1.70
1.60
0.50
0.90
1.10
1.00
1.50
1.70
1.60
0.56
0.60
0.60
0.10
0.30
0.20
0.10
0.18
All Dimensions in mm
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180
°
rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added Lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
C
U
D
O
R
P
W
E
N
2N7002VC
(ASK Marking Code)
G
1
D
1
D
2
S
2
S
1
G
2
2N7002VAC
(AYK Marking Code)
SEE NOTE 1
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參數(shù)描述 |
|---|---|
| 2N7002VC_07 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002VC-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002VPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:Dual N-Channel Enhancement MOS FET |
| 2N7002V-TP | 功能描述:MOSFET 2N-CH 60V 280MA SOT-563 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| 2N7002W | 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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