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參數(shù)資料
| 型號(hào)： | 2N7002W |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | 2N7002W |
Electrical Characteristics
@ TA = 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BVDSS
60
70
V
VGS = 0V, ID = 10 A
Zero Gate Voltage Drain Current
@ TC = 25°C
@ TC = 125°C
IDSS
1.0
500
A
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
±10
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
1.0
2.0
V
VDS =VGS, ID =-250 A
On-State Drain Current
ID(ON)
0.5
1.0
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
80
mS
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
22
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
11
25
pF
Reverse Transfer Capacitance
Crss
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
7.0
20
ns
VDD = 30V, ID = 0.2A,
RL = 150 , VGEN = 10V,
RGEN = 25
Turn-Off Delay Time
tD(OFF)
11
20
ns
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
300ms, duty cycle 2%.
Static Drain-Source On-Resistance
@ Tj = 25°C
@Tj = 125°C
RDS (ON)
3.2
4.4
7.5
13.5
W
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
2N7002W
MCC
Revision: 4
2008/01/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 4
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| 2N7002 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002W _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002W_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002W_05 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002W_07 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET |
| 2N7002W_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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