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參數(shù)資料
| 型號(hào)： | 2N7002WT/R7 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 162K |
| 代理商： | 2N7002WT/R7 |
PAGE . 4
STAD-JUL.26.2007
2N7002W
Fig.6 - Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.7 - Gate Charge
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.10 - Source-Drain Diode Forward Voltage
Qgd
Qgs
Qg
Qsw
Vgs(th)
Vgs
Qg
Qg(th)
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
VSD - Source-to-Drain Voltage (V)
IS
-
S
our
c
e
C
u
rr
e
nt
(A
)
V =0V
GS
T =125 C
J
O
T =25 C
J
O
T =-55 C
J
O
0.6
0.7
0.8
0.9
1
1.1
1.2
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (
oC)
V
th
-
G
-S
Thre
s
hold
V
olt
a
ge
(N
O
R
MALIZE
D)
I =250uA
D
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
Qg - GateCharge(nC)
V
GS
-
G
at
e-
to
-S
o
u
rce
V
o
lt
ag
e
(V
)
V =15V
I =500mA
DS
D
64
65
66
67
68
69
70
71
72
73
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (
oC)
BV
DS
S
-
B
re
a
k
dow
n
V
ol
ta
ge
(V
)
I =250uA
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002Z | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N7002Z_12 | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N7002ZDW | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7002ZDW_12 | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N7002ZDWG-AL6-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
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