參數資料
型號: 2N7008
廠商: SUPERTEX INC
元件分類: 小信號晶體管
英文描述: N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述: 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: TO-92, 3 PIN
文件頁數: 1/2頁
文件大?。?/td> 20K
代理商: 2N7008
7-15
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
2N7008
Order Number / Package
BV
DSS
/
BV
DGS
60V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-92
7.5
500mA
2N7008
Ordering Information
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Note: See Package Outline section for dimensions.
Features
I
I
Free from secondary breakdown
I
I
Low power drive requirement
I
I
Ease of paralleling
I
I
Low C
ISS
and fast switching speeds
Excellent thermal stability
I
I
I
I
Integral Source-Drain diode
I
I
High input impedance and high gain
I
I
Complementary N- and P-channel devices
Applications
I
I
Motor controls
I
I
Converters
I
I
Amplifiers
I
I
Switches
I
I
Power supply circuits
I
I
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
30V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
TO-92
S G D
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相關代理商/技術參數
參數描述
2N7008/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SMALL SIGNAL FIELD EFFECT TRANSISTOR
2N7008_07 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs
2N7008_D26Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7008-G 功能描述:MOSFET 60V 7.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7008-G P002 制造商:Supertex Inc 功能描述:N-Channel MOSFET