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參數(shù)資料
| 型號： | 2N7008P003 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 394K |
| 代理商： | 2N7008P003 |
2
2N7008
Electrical Characteristics (T
A = 25°C unless otherwise specied)
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
DRAIN-to-SOURCE breakdown
voltage
60
-
V
GS = 0V, ID = -10A
V
GS(th)
GATE threshold voltage
1.0
-
2.5
V
GS = VDS, ID = 250A
I
GSS
GATE body leakage current
-
100
nA
V
GS = ±30V, VDS = 0V
I
DSS
Zero GATE voltage drain current
-
1.0
A
V
GS = 0V, VDS = 50V
-
500
A
V
GS = 0V, VDS = 50V,
T
A = 125
OC
I
D(ON)
ON-state DRAIN current
500
-
mA
V
GS = 10V, VDS ≥ 2.0VDS(ON)
R
DS(ON)
Static DRAIN-to-SOURCE
ON-state resistance
-
7.5
Ω
V
GS = 5.0V, ID = 50mA
-
7.5
V
GS = 10V, ID = 500mA
G
FS
Forward transconductance
80
-
mmho
V
DS = 10V, ID = 0.2A
C
ISS
Input capacitance
-
50
pF
V
GS = 0V, VDS = 25V,
f = 1.0MHz
C
OSS
Common SOURCE output
capacitance
--
25
C
RSS
Reverse transfer capacitance
-
5
t
(ON)
Turn-ON time
-
20
ns
V
DD = 30V, ID = 200mA,
R
GEN = 25
t
(OFF)
Turn-OFF time
-
20
V
SD
Diode forward voltage drop
-
1.5
V
GS = 0V, ISD = 150mA
Notes:
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
Device
Package
I
D
(continuous)*
(mA)
I
D
(pulsed)
(A)
Power Dissipation
@T
C = 25
OC
(W)
θ
ja
(
OC/W)
θ
jc
(
OC/W)
I
DR
*
(mA)
I
DRM
(A)
2N7008
TO-92
230
1.3
1.0
170
125
230
1.3
Notes:
* I
D (continuous) is limited by max rated Tj.
90%
10%
90%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
OUTPUT
10V
V
DD
RGEN
0V
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