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參數(shù)資料
| 型號： | 2N700 |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 20 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-72 |
| 封裝： | TO-72, 4 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 239K |
| 代理商： | 2N700 |
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2N700 Information
Category Transistors
2N700 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 20в
V(BR)CBO (V) : 25
I(C) Max. (A) : 50m
Absolute Max. Power Diss. (W) : 75m
Maxim um Operating Tem p (шC) : 100х
I(CBO) Max. (A) : 2.0u
@V(CBO) (V) (Test Condition) : 6.0
h(FE) Min. Current gain. : 1.5
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 2.0m
@V(CE) (V) (Test Condition) : 6.0
h(fe) Min. SS Current gain. : 4.0
@I(C) (A) (Test Condition) : 2.0m
@V(CE) (V) (Test Condition) : 6.0
@Freq. (Hz) (Test Condition) : 1.0k
f(T) Min. (Hz) Transition Freq :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) : 1.5p
@V(CB) (V) (Test Condition) : 6.0
@Freq. (Hz) (Test Condition) : 100k
Package Style : TO-72
Mounting Style : T
Description :
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| 2N7000 | 功能描述:MOSFET N-CHANNEL 60V 200mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N-7000 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2N7000 AMO | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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