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參數(shù)資料
| 型號(hào)： | 2N7086 |
| 英文描述： | N-Channel Enhanced Mode MOS Transistor（V(br)dss：200V，Id：14A，Rds(on)：0.16Ω）(N溝道增強(qiáng)型MOS晶體管（V(br)dss：200V，Id：14A，Rds(on)：0.16Ω）) |
| 中文描述： | N溝道增強(qiáng)型MOS晶體管（五（巴西）直：為200V，檔案號(hào)：第14A條，的Rds（on）：0.16Ω）（不適用溝道增強(qiáng)型馬鞍山晶體管（五（巴西）直：為200V，檔案號(hào)：第14A時(shí)，RDS （上）：0.16Ω）） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 14K |
| 代理商： | 2N7086 |
Parameter
Min.
Typ.
Max.
Unit
R
thJC
R
thJA
R
thCS
Thermal resistance Junction-Case
Thermal resistance Junction-ambient
Thermal resistance Junction-ambient
2.1
80
K/W
1.0
2N7086
Prelim. 1/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
V
DS
= V
GS
V
DS
= 0
V
DS
= 160V
V
GS
= 0
V
DS
= 10V
V
GS
= 10V
I
D
= 8.5A
V
DS
= 15V
I
D
= 250μA
I
D
= 250μA
V
GS
= ±20V
T
J
= 125°C
V
GS
= 10V
T
J
= 125°C
I
DS
= 8.5A
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
DS
= 0.5 x V
(BR)DSS
V
GS
= 10V
I
D
= 14A
V
DD
= 100V
V
GEN
=10V
R
L
= 7.1
R
G
= 4.7
I
D
= 14A
I
F
= I
S
I
F
= I
S
dI
F
/dt = 100A/μs
V
GS
= 0
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
THERMAL RESISTANCECHARACTERISTICS
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current
1
Static Drain – Source On–State
Resistance
1
Forward Transconductance
1
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate Source Charge
2
Gate Drain Charge
2
Turn–On Delay Time
2
Rise Time
2
Turn–Off Delay Time
2
Fall Time
2
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulse Current
3
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
200
2
4
±100
25
250
14
0.14
0.25
0.16
0.30
5.0
1550
500
220
44
10
26
10
60
30
40
30
4.6
13
77
15
35
30
100
80
95
114
56
2.0
650
150
0.5
V
V
nA
μA
A
S
pF
nC
ns
A
V
ns
μC
BV
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
1
Pulse test : Pulse Width < 300
μ
s ,Duty Cycle < 2%
2
Independent of Operating Temperature
3
Pulse width Limited by maximum Junction Temperature
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