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參數(shù)資料
| 型號： | 2N720A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE GENERAL PURPOSE |
| 中文描述： | 高壓一般用途 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2N720A |
ELECTRICAL CHARACTERISTICS
(T
amb
= 25
°
C unless otherwise specified)
Symbol
I
CBO
Parameter
Test Conditions
V
CB
= 90 V
Min.
Typ.
Max.
10
Unit
nA
Collector Cutoff Current
(I
E
= 0)
Collector–base Breakdown
Voltage
(I
E
= 0)
Collector–emitter Breakdown
Voltage
(I
B
= 0)
Emitter–base Breakdown
Voltage
(I
E
= 0)
Emitter Cuttoff Current
(I
E
= 0)
Collector–emitter Saturation
Voltage
Base–emitter Saturation
Voltage
DC Current Gain
V
(BR)CBO
I
C
= 100
μ
A
120
V
V
(BR)CEO
*
I
C
= 30 mA
80
V
V
(BR)EBO
I
E
= 100
μ
A
7
V
I
EBO
V
EB
= 5 V
10
nA
V
CE(sat)
*
I
C
= 50 mA
I
C
= 150 mA
I
C
= 50 mA
I
C
= 150 mA
I
C
= 100
μ
A
I
C
= 10 mA
I
C
= 150 mA
I
C
= 50 mA
f = 20 MHz
I
E
= 0
f = 1 MHz
I
C
= 0
f = 1 MHz
I
B
= 5 mA
I
B
= 15 mA
I
B
= 5 mA
I
B
= 15 mA
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
1.2
5
0.9
1.3
V
V
V
V
–
–
–
–
V
BE(sat)
*
h
FE
*
20
35
40
2.5
120
h
fe
High Frequency Current
Gain
Collector–base Capacitance
C
CBO
V
CB
= 10 V
15
pF
C
EBO
Emitter–base Capacitance
V
EB
= 0.5 V
85
pF
* Pulsed : pulse duration = 300
μ
s, duty cycle = 1 %.
THERMAL DATA
R
th j-case
R
th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
97.2
350
°
C/W
°
C/W
2N720A
2/4
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