參數(shù)資料
型號: 2N720AS
廠商: Semicoa Semiconductor
英文描述: Silicon NPN Transistor
中文描述: 硅NPN晶體管
文件頁數(shù): 2/2頁
文件大?。?/td> 218K
代理商: 2N720AS
Copyright
2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 2 of 2
2N720A
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
°
C
Off Characteristics
Parameter
Symbol
V
(BR)CEO
Test Conditions
I
C
= 30 mA
Min
80
Typ
Max
Units
Volts
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
V
(BR)CER
I
C
= 10 mA, R
BE
= 10
100
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
I
CBO3
I
EBO1
I
EBO2
V
CB
= 120 Volts
V
CB
= 90 Volts
V
CE
= 90 Volts, T
A
= 150
O
C
V
EB
= 7 Volts
V
EB
= 5 Volts
100
10
15
100
10
μ
A
nA
μ
A
μ
A
nA
Emitter-Base Cutoff Current
On Characteristics
Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
2.0%
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
Test Conditions
I
C
= 1 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts,
T
A
= -55
O
C
I
C
= 150 mA, I
B
= 15 mA
I
C
= 150 mA, I
B
= 15 mA
Min
20
35
40
20
Typ
Max
120
1.3
5.0
Units
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
V
BEsat
V
CEsat
Volts
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
V
CE
= 10 Volts, I
C
= 50 mA,
f = 20 MHz
f = 1 kHz
V
CE
= 5 Volts, I
C
= 1 mA
V
CE
= 10 Volts, I
C
= 5 mA
V
CB
= 10V, I
C
= 5mA
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
3
10
Short Circuit Forward Current Transfer
Ratio
h
FE1
h
FE2
h
ie
35
45
4
100
150
8
Short Circuit Input Impedance
Open Circuit Output Admittance
Open Circuit reverse Voltage Transfer
Ratio
h
oe
V
CB
= 10V, I
C
= 5mA
0.5
μ
h
re
V
CB
= 10V, I
C
= 5mA
1.5x10
-4
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
2
15
pF
Switching Characteristics
Pulse Response
t
on
+ t
off
30
ns
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PDF描述
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