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參數(shù)資料
| 型號： | 2N7228R1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 500 V, 0.515 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 16K |
| 代理商： | 2N7228R1 |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
2N7228
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
4/99
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 8A
VGS = 10V
ID = 12A
VDS = VGS
ID = 250A
VDS ≥ 15V
IDS = 8A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 12A
VDS = 0.5BVDSS
VDD = 250V
ID = 12A
RG = 2.35
IS = 12A
TJ = 25°C
VGS = 0
IF = 12A
TJ = 25°C
di / dt ≤ 100A/sVDD ≤ 50V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 2
Gate Threshold Voltage
Forward Transconductance 2
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 1
Diode Forward Voltage 2
Reverse Recovery Time 2
Reverse Recovery Charge 2
Forward Turn–On Time
500
0.68
0.415
0.515
24
6.5
25
250
100
–100
2700
600
240
12
55
120
519
27
70
35
190
170
130
12
48
1.7
1600
14
Negligible
8.7
V
V/°C
V
S(
A
nA
pF
nC
ns
A
V
ns
C
nH
BVDSS
BV
DSS
T
J
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Ciss
Coss
Crss
CDC
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
STATIC ELECTRICAL RATINGS
1) Repetitive Rating – Pulse width limited by Maximum
Junction Temperature
2) Pulse Test: Pulse Width
≤ 300s, δ≤ 2%
*IS Current limited by pin diameter.
Notes
DYNAMIC CHARACTERISTICS
Internal Drain Inductance Measured from 6mm down drain lead to centre of die
Internal Source Inductance Measured from 6mm down source lead to source bond pad
PACKAGE CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
(
)
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