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參數(shù)資料
| 型號： | 2N7261 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | MODIFIED TO-39, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 284K |
| 代理商： | 2N7261 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/601
T4-LDS-0119 Rev. 2 (101017)
Page 3 of 5
Single Event Effect (SEE) Characteristics:
Heavy Ion testing of the 2N7261 device has been characterized at the Texas A&M cyclotron. The
following SOA curve has been established using the elements, LET, range, and Total Energy
conditions as shown:
2N7261
0
10
20
30
40
50
60
70
80
90
100
110
-25
-20
-15
-10
-5
0
Gate Bias, V
D
rai
n
B
ias
,V
TAMU Ar
LET=8.3
Range =192um
Total Energy=531MeV
TAMU Kr
LET=27.8
Range =134um
Total Energy=1032MeV
TAMU Ag
LET=42.2
Range =119um
Total Energy=1289MeV
TAMU Au
LET=85.4
Range =118um
Total Energy=2247MeV
It should be noted that total energy levels are considered to be a factor in SEE characterization.
Comparisons to other datasets should not be based on LET alone. Please consult factory for more
information.
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