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參數(shù)資料
| 型號(hào)： | 2N7368 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-254 |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 10A條一（c）|至254 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 52K |
| 代理商： | 2N7368 |
2N7368 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 2.0 Vdc
I
C
= 3.0 Adc, V
CE
= 2.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 5.0 Adc, I
B
= 0.5 Adc
Base-Emitter Saturation Voltage
I
C
= 5.0 Adc, I
B
= 0.5 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz
Output Capacitance
V
CB
=10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t
≥
1.0 s
Test 1
V
CE
= 11.5 Vdc, I
C
= 10 Adc
Test 2
V
CE
= 45 Vdc, I
C
= 2.5 Adc
Test 3
V
CE
= 60 Vdc, I
C
= 0.9 Adc
(2) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
h
FE
50
30
175
140
1.0
1.5
V
CE(sat)
V
BE(sat)
Vdc
Vdc
h
fe
C
obo
4.0
20
500
pF
120101
Page 2 of 2
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2N7368JAN | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN HIGH POWER SILICON TRANSISTOR |
| 2N7368JANTX | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN HIGH POWER SILICON TRANSISTOR |
| 2N7368JANTXV | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN HIGH POWER SILICON TRANSISTOR |
| 2N7369 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 10A 3PIN TO-254 - Bulk |
| 2N7369JAN | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP HIGH POWER SILICON TRANSISTOR |
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